Process technology for next generation photomask

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6669-6674

  Sohn, Jung Min ^a   Kim, Byung Gook ^a   Choi, Sung Woon ^a   Kim, Jin Min ^a   Cha, Byung Cheol ^a   Yoon, Hee Sun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Optical lithography; Optical proximity correction; Phase shift mask; Photomask process

Indexed keywords

EID: 0007088118     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6669     Document Type: Article

References (4)

1. The National Technology Roadmap for Semiconductors 1997, Semiconductor Industry Association, Austin, Texas, (1997)
2. G. Owen and P. Rissman: J. Appl. Phys. 54 (1983) 3573.
3. T. Higuchi: Proc. Photomask. X-Ray Mask Tech., III, 2793 (1997) p. 78.
4. J. F. Chen: Proc. 17th Ann. Symp., Photomask Tech. Mang. 3236 (1997) p. 382.