Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 88-91

  Kasai, Seiya ^a   Satoh, Yoshihiro ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRON TUNNELING; INTEGRATED CIRCUITS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

SCHOTTKY WRAP GATE SINGLE ELECTRON TRANSISTORS;

GATES (TRANSISTOR);

EID: 0033313818     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00373-7     Document Type: Article

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