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Volumn 273-274, Issue , 1999, Pages 584-588

Deep defects in n-type high-purity germanium: Quantification of optical variants of deep level transient spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS;

EID: 0033313789     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00579-7     Document Type: Article
Times cited : (5)

References (18)
  • 11
    • 33646324088 scopus 로고    scopus 로고
    • Ph. D. Thesis, Universiteit Gent, Gent
    • A. Blondeel, Ph. D. Thesis, Universiteit Gent, Gent 1998.
    • (1998)
    • Blondeel, A.1
  • 16
    • 0012851029 scopus 로고
    • P.A. Barnes, G.A. Rozgonyi (Eds.), PV 78-3, The electrochemical society, Princeton, NJ
    • G.M. Martin, D. Bois, in: P.A. Barnes, G.A. Rozgonyi (Eds.), Semiconductor Characterization Techniques, PV 78-3, The electrochemical society, Princeton, NJ, 1978, pp. 32-42.
    • (1978) Semiconductor Characterization Techniques , pp. 32-42
    • Martin, G.M.1    Bois, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.