Effect of lithium diffusion on the native defects in GaAs studied by positron annihilation spectroscopy

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 701-704

  Arpiainen, S ^a   Saarinen, K ^a   Gudmundsson, J T ^b   Gislason, H P ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF ICELAND   (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; LITHIUM; PASSIVATION; POSITRONS; SPECTROSCOPIC ANALYSIS;

ANTISITE; POSITRON ANNIHILATION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033312176     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00614-6     Document Type: Article

References (10)

1. C.S. Fuller et al., J. Appl. Phys. 33 (1962) 2507.
2. H.P. Gislason et al., Materials Science Forum 83-87 (1992) 985.
3. C.S. Fuller et al., J. Appl. Phys. 35 (1962) 1227.
4. B.H. Yang et al., Phys. Rev. B 48 (1993) 12345.
5. H.P. Gislason et al., Mater. Sci. Forum 258-263 (1997) 1813.
6. K. Saarinen et al., in: M. Stavola (Ed.), Identification of Defects in Semiconductors Semiconductors and Semimetals, Vol. 51A, Academic Press, New York, 1998, p. 209.
7. S. Kuisma et al., Phys. Rev. B 53 (1996) 9814.
8. K. Saarinen et al., Phys. Rev. B 49 (1994) 8005.
9. S. Kuisma et al., Phys. Rev. B 55 (1997) 9609.
10. K. Saarinen et al., Phys. Rev. B 44 (1991) 10585.