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Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1813-1820

Lithium induced vacancy formation and its effect on the diffusivity of lithium in gallium arsenide

(5) Gislason, H P c Leosson, K c Svavarsson, H c Saarinen, K a Mari, A b

a AALTO UNIVERSITY (Finland)

b SORBONNE UNIVERSITÉ (France)

c UNIVERSITY OF ICELAND (Iceland)

Author keywords

Antisites; Diffusivity; GaAs; Lithium; Local modes; Positron annihilation; Vacancies

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; CRYSTAL DEFECTS; HEAT TREATMENT; INFRARED SPECTROSCOPY; INTERDIFFUSION (SOLIDS); LITHIUM; PASSIVATION; SEMICONDUCTOR DOPING;

POSITRON LIFETIME SPECTROSCOPY; TRAPPING EFFECT; VACANCY FORMATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 12844252091 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1813 Document Type: Article

Times cited : (5)

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