Overall kinetics of SiOx remote-PECVD using different organosilicon monomers

Surface and Coatings Technology

Volumn 116-119, Issue , 1999, Pages 874-878

  Bayer, Ch ^a   Bapin, E ^a   Rudolf Von Rohr, Ph ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Deposition rate; Modeling; Organosilicon; PECVD; Silicon dioxide

Indexed keywords

FILM GROWTH; MATHEMATICAL MODELS; MONOMERS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILANES;

TETRAETHOXYSILANE; TETRAMETHOXYSILANE;

SILICA;

EID: 0033311624     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00318-7     Document Type: Article

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