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Volumn 38, Issue 10 B, 1999, Pages

SiO vapor pressure in an SiO2 glass/Si melt/SiO gas equilibrium system

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; GLASS; MOLTEN MATERIALS; PHASE EQUILIBRIA; PRESSURE MEASUREMENT; SILICA; THERMAL EFFECTS; VAPOR PRESSURE;

EID: 0033309550     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1153     Document Type: Article
Times cited : (10)

References (14)
  • 1
    • 0003347212 scopus 로고
    • eds. H. R. Huff, R. J. Kriegler and Y. Takeshi, The Electrochem. Soc., Pennington
    • K. Hoshikawa, H. Hirata, H. Nakanishi and K. Ikuta: Semiconductor Silicon, eds. H. R. Huff, R. J. Kriegler and Y. Takeshi (The Electrochem. Soc., Pennington, 1981) p. 101.
    • (1981) Semiconductor Silicon , pp. 101
    • Hoshikawa, K.1    Hirata, H.2    Nakanishi, H.3    Ikuta, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.