High rate deposition of microcrystalline silicon using resonance plasma source (HELIX) plasma properties and deposition results

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 609-614

  Gruger H ^a   Terasa, R ^a   Haiduk, A ^a   Kottwitz, A ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; EMISSION SPECTROSCOPY; FILM GROWTH; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITIVE IONS; RAMAN SPECTROSCOPY; SILANES; THIN FILMS;

PLASMA PROPERTIES; RESONANCE PLASMA SOURCE;

SEMICONDUCTING SILICON;

EID: 0033300197     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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3. P. Hapke, F. Finger, J. Non Cryst. Solids 227-230, 862 (1998)
4. Patent DE 43 37 119 C2 (1996)
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