Characterization of hydrogen in hydrogenated nano-crystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 317-322

  Yamamoto, K ^a   Itoh, T ^a   Ushikoshi, K ^a   Nonomura, S ^a   Nitta, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; HYDROGEN; HYDROGENATION; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; VOLUME FRACTION;

CRYSTALLINITY; GAS EFFUSION SPECTROSCOPY; HYDROGEN CONCENTRATION; HYDROGENATED NANOCRYSTALLINE SILICON; NANOCRYSTALLINE GRAINS; SURFACE DENSITY;

THIN FILMS;

EID: 0033298866     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-317     Document Type: Article

References (5)

1. T. Itoh, S. Nitta, S.L. Wang, and P.C. Taylor, J. Appl. Phys. 80, p.6028-6031 (1996).
2. W. Beyer, P. Hapke, and U. Zastrow in Amorphous silicon Technology-1997, edited by S. Wagner, M. Hack, E.A. Schiff, R. Schropp, and I. Shimizu (Mater. Res. Soc. Proc. 467, Pittsburgh, PA 1997), p.343-348.
3. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, Jr., and K.C. Janda, Phys. Rev. Letters 62, p.567-570 (1989).
4. W. Beyer, Physica B 170, p.105-114 (1991).
5. S. Nitta, M. Kawai, M. Sakaida, I. Murase, and A. Hatano in Tetrahedrally-Bondcd Amorphous Semiconductors, edited by D. Adler and H. Fritzsche (Plenum Press, Ne%v York, NY 1985),p.501-511.