Preparation of triple-junction A-Si:H NIP based solar cells at deposition rates of 10 Å/s using a very high frequency technique

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 133-138

  Jones, S J ^a   Deng, X ^a   Liu, T ^a   Izu, M ^a  

^a Energy Conversion Devices Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SOLAR CELLS;

AMORPHOUS SILICON GERMANIUM; LIGHT STABILITY; PLASMA FREQUENCY; VERY HIGH FREQUENCY METHOD;

AMORPHOUS SILICON;

EID: 0033297491     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-133     Document Type: Article

References (6)

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