Laser crystallized polysilicon TFT's using LPCVD, PECVD and PVD silicon channel materials-a comparative study

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 623-628

  Fulks, R T ^a   Boyce, J B ^a   Ho, J ^a   Davis, G A ^b   Aebi, V ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

^b Intevac Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; EXCIMER LASERS; GATES (TRANSISTOR); LASER APPLICATIONS; LOW TEMPERATURE OPERATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; POLYSILICON; SILICON CHANNEL MATERIALS;

SEMICONDUCTING SILICON;

EID: 0033297454     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-623     Document Type: Article

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