Growth and properties of semi-insulating VGF-GaAs

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 248-251

  Buhrig, E ^a   Frank, C ^a   Hannig, C ^a   Hoffmann, B ^b  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Annealing; Gallium arsenide; Vertical gradient freeze

Indexed keywords

ANNEALING; BORON COMPOUNDS; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; ENCAPSULATION; ETCHING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

ETCH PIT DENSITY (EPD); VERTICAL GRADIENT FREEZE (VGF) METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0001316653     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)80007-4     Document Type: Article

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