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Volumn 23, Issue 4, 1999, Pages 565-575

Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; PHONONS; QUANTUM THEORY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SHUBNIKOV-DE HAAS EFFECT; SURFACE ROUGHNESS;

EID: 0033282505     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.