Well-width dependence of the in-plane effective mass and quantum lifetime of electrons in GaAs/Ga1-xAlxAs multiple quantum wells

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 389-395

  Celik H ^a   Cankurtaran, M ^a   Bayrakli, A ^a   Tiras, E ^a   Balkan, N ^b  

^a HACETTEPE UNIVERSITY   (Turkey)

^b UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); LIGHT MODULATION; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ELECTRON QUANTUM LIFETIME;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031119564     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/008     Document Type: Article

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