CVD Cu process development and integration for sub-0.18 μm devices

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 243-249

  Zhang, Timing ^a   Denning, Dean ^a   Braeckelmann, Greg ^a   Hamilton, Greg ^a   Lee, J J ^a   Venkatraman, Ram ^a   Fiordalice, Bob ^a   Weitzman, Elizabeth ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COPPER;

PHYSICAL VAPOR DEPOSITION (PVD); REFLOW INTEGRATION METHOD;

ELECTRIC CONTACTS;

EID: 0033279531     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-243     Document Type: Article

References (9)

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9. D. Denning. G. Braeckelmann, J. Zhang, R. Fiordalice, and R. Venkatraman, VLSI, 22, 1998.