PVD Ti-Si-N films process development for copper interconnect applications

Materials Research Society Symposium - Proceedings

Volumn 514, Issue , 1998, Pages 513-519

  Zhang, Jiming ^a   Venkatraman, Ram ^a   Wilson, Terri ^a   Fiordalice, Robert ^a   Gregory, Rich ^a   Weitzman, Elizabeth ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COPPER; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; LEAKAGE CURRENTS; MECHANICAL VARIABLES MEASUREMENT; METALLIZING; SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; VAPOR DEPOSITION;

COPPER INTERCONNECT APPLICATIONS; LOW CONTACT RESISTANCE; PHYSICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032294218     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-514-513     Document Type: Conference Paper

References (5)