Materials issues for optical components and photomasks in 157 nm lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 3273-3279

  Liberman, V ^a   Bloomstein, T M ^a   Rothschild, M ^a   Sedlacek, J H C ^a   Uttaro, R S ^a   Bates, A K ^b,e   Van Peski, C ^c,e   Orvek, K ^d,e  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM   (United States)

^c SEMATECH   (United States)

^d INTEL CORPORATION   (United States)

^e MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033263063     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590994     Document Type: Article

References (19)

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6. Estimated from reflectance and transmittance measurements.
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13. organized by International SEMATECH; J. Chang, A. Abdo, B. Kim, T. M. Bloomstein, R. Engelstad, E. Lovell, W. Beckman, and J. Mitchell, Proc. SPIE 3676, 756 (1999).
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