Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Journal of Materials Research

Volumn 14, Issue 11, 1999, Pages 4395-4401

  Kim, Seung Hyun ^a   Kim, D J ^a   Lee, K M ^a   Park, M ^a   Kingon, A I ^a   Nemanich, R J ^b   Im, J ^c   Streiffer, S K ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; DEPOSITION; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; POLARIZATION; REMANENCE; STRONTIUM COMPOUNDS; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; STRONTIUM BISMUTH TANTALATE;

DIELECTRIC MATERIALS;

EID: 0033221317     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0594     Document Type: Article

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