Spreading-Resistance Temperature Sensor on SOI

Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

Volumn 1998-August, Issue , 1998, Pages 148-151

  Lai, P T ^a   Li, Bin ^a   Chan, C L ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; SILICON ON INSULATOR TECHNOLOGY;

INTEGRATED SENSORS; SENSOR STRUCTURES; SILICON ON INSULATOR WAFERS; SPREADING RESISTANCE;

SILICON WAFERS;

EID: 0343726880     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HKEDM.1998.740208     Document Type: Conference Paper

References (5)

1. G. Raabe, Silizium-temperature-sensoren von -50°C bis +350°C, NTG Fachberichte, 79 (1982) 248-253.
2. G.G.E. Low, Carrier concentration disturbances in semiconductors, Proc. Phys. Soc. B, 68(1955)310-314.
3. S.R. in't Hout and S. Middelhoek, 400°C silicon Hall sensor, Sensors and Actuators A,60(1997) 14-22.
4. P.T. Lai and Baiyong Liu, Monolithic integrated spreading-resistance silicon flow sensor, Sensors and Actuators A, 5S (1997) 85-88.
5. P.T. Lai and Baiyong Liu, A two-dimensional flow sensor using integrated silicon spreading-resistance temperature detectors, Rev. Sci. Instrum., 68(1997) 10-15.