Dynamic switching characteristics of pseudo-spin valve memory elements

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 2835-2837

  Fang, Tzu Ning ^a   Zhu, Jian Gang ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MAGNETIC HEADS; MAGNETIZATION; MATHEMATICAL MODELS; RANDOM ACCESS STORAGE; REMANENCE; SWITCHING THEORY;

CURRENT PULSES; MICROMAGNETIC MODELING; PSEUDO-SPIN VALVE MEMORY ELEMENTS; ROTATION SWITCHING;

MAGNETIC STORAGE;

EID: 0033183946     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.800996     Document Type: Article

References (3)

1. D.D. Tang, P.K. Wang, V.S. Speriosu, S. Le, K. and K. Kung Spin-Valve RAM Cell", IEEE Trans. Magn., Vol.31, p.3206 (1995).
2. A. Polm, J. M. Anderson, R. S. Beech, and J. M. Daughton Effect of Write Field Rise Times on the Switching Thresholds of Pseudo Spin Valve Memory Cells", J. Appl. Phys. Vol. 85, No 8, 4771 (1999).
3. Shehzaad Kaka, S. E. Russek, J. O. Oti, and E. Chen High-speed Characterization of Sub-micrometer Pseudo Spin-vavle MRAM Devices", J. Appl. Phys. Vol. 85, No 8, 4773 (1999).