Effect of write field rise times on the switching thresholds of pseudo spin valve memory cells

Journal of Applied Physics

Volumn 85, Issue 8 II A, 1999, Pages 4771-4772

  Pohm, A V ^a   Anderson, J M ^a   Beech, R S ^a   Daughton, J M ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343286071     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370476     Document Type: Article

References (1)

1. B. A. Everitt, A. V. Pohm, R. S. Beech, A. Fink, and J. M. Daughton, J. Appl. Phys. (these proceedings).