Ferromagnetic/III-V Semiconductor Heterostructures and Magneto-Electronic Devices

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 2, 1999, Pages 3661-3663

  Xu, Y B ^a   Freeland, D J ^a   Tselepi, M ^a   Guertler, C M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Fe gaas; Fe inas; Magnetoelectronics; Ultrathin films interface magnetism

Indexed keywords

FERROMAGNETIC MATERIALS; HETEROJUNCTIONS; INTERFACES (MATERIALS); IRON; MAGNETIC SEMICONDUCTORS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; ULTRATHIN FILMS;

MAGNETOELECTRONIC DEVICES; ULTRATHIN FILMS INTERFACE MAGNETISMS;

MAGNETIC THIN FILM DEVICES;

EID: 0033183908     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.800623     Document Type: Article

References (14)

1. G. A. Prinz, in Ultrathin Magnetic Structures, edited by B, Heinrich and J. A. C. Bland (Springer-Verlag, Berlin, 1994), Vol. II, pp. 1-44
2. 0. A. Prinz,Magnetoelectronics Science, vol. 282, p. 1660, 1998
3. J. J. Krebs, B. T. Jonker, and G. A. Prinz,Properties of Fe singlecrystal films on (100) QaAs by molecular beam epitaxy J. Appl. Phys. , Vol. 61, p. 2596, 1987
4. A. Filipe, A. Schiihl and P. Galtier,Structure and magnetism of the Fe/GaAs interface Appl. Phys. Lett. , vol. 70, p. 129, 1997
5. J. M, Florczak and E. D. Dahlberg,Magnetization reversal in (100) Fe thin film Phys. Rev. B 44, p. 9338, 1991
6. C. Daboo, R. J, Hickcn, E. Gu, M, Gester, S. J. Gray, D, E. P. Eley, E. Ahmad, and A. C. Bland,Anisotropy and orientation dependence of magnetization reversal processes in epitaxial ferromagnetic thin films Phys. Rev. B 51, p. 15964, 1995
7. Metal-semiconductor contacts edited by E. H, Rhoderick, and R. H. Williams, Oxford University Press, Oxford, 19138
8. Y. B. Xu, E. T. M. Kernohan, M. Tselepi, J. A. C. Bland and S. Holmes,Single crystal Fe films grown on InAs(lOO) by molecular beam epitaxy Appl. Phys. Lett. Vol. 73, p. 399, 1998
9. Y, B, Xu, E. T. Kernoham, D. J. Freeland, A. Ercole, M. Tselepi, J, A, C. Bland,Evolution of the ferromagnetic phase of ultrathin Fe films grown on GaAs(100)-4x6 Phys. Rev. B58, p. 890, 1998
10. M, Tselepi, Y. B. Xu, D. J. Freeland, and J. A. . C. Bland, unpublishe
11. C. P. BeanandJ. D. Livingston, J. Appl. Phys. vol. 30, p. 120, 1959
12. S, Datta and B. Das,Electronic analog of the electroopti modulator Appl. Phys, Lett. 56, 665, 1990 '
13. Y, B. Xu et al,Ferromagnetic metal/semiconductor hybrid structure for magnetoelectranics J. Appl. Phys. vol. 85, p. 5369, 1999.
14. H. Kitabayashi, T. Waho, and M. Yamamotp,Resonant interban tunneling . current in InAs/AlSb/GaSb/AIJSb/InAs diodes wit extremely thin AlSb barrier layers Appl. Phys. Lett. , vol. 71, p. 512 1997. j