Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics

Journal of Applied Physics

Volumn 85, Issue 8 II B, 1999, Pages 5369-5371

  Xu, Y B ^a   Freeland, D J ^a   Kernohan, E T M ^a   Lee, W Y ^a   Tselepi, M ^a   Guertler, C M ^a   Vaz, C A F ^a   Bland, J A C ^a   Holmes, S N ^b   Patel, N K ^b   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; IRON; KERR MAGNETOOPTICAL EFFECT; MAGNETIC VARIABLES MEASUREMENT; METALLIC FILMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS; TUNNEL DIODES;

ALUMINUM ANTIMONIDE; GALLIUM ANTIMONIDE; INDIUM ARSENIDE; MAGNETOELECTRONICS;

FERROMAGNETIC MATERIALS;

EID: 13044267735     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369980     Document Type: Article

References (10)

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