Hall factors of Si NMOS inversion layers for MAGFET modeling

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1803-1804

  Jungemann, C ^a   Dudenbostel, D ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETIC FIELDS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE;

INVERSION LAYER; MAGNETIC FIELD EFFECT TRANSISTOR; QUASI TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033169508     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777173     Document Type: Article

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