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Volumn 39, Issue 6-7, 1999, Pages 1043-1047

Gold removal in failure analysis of GaAs-based laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; ETCHING; FAILURE ANALYSIS; GOLD; METALLIZING; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033145396     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00144-4     Document Type: Article
Times cited : (18)

References (4)
  • 4
    • 0032043750 scopus 로고    scopus 로고
    • Failure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMT's
    • April
    • G Meneghesso, F Magistrali, D Sala, M Vanzi, C Canali, E Zanoni: "Failure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMT's" Microelectronics Reliability, Vol.38, N.4, pp. 497-506 April 1998
    • (1998) Microelectronics Reliability , vol.38 , Issue.4 , pp. 497-506
    • Meneghesso, G.1    Magistrali, F.2    Sala, D.3    Vanzi, M.4    Canali, C.5    Zanoni, E.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.