FIB voltage contrast measurement for enhanced circuit repairs

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1003-1008

  Desplats, Romain ^a   Benteo, Bruno ^a   Perdu, Philippe ^a  

^a CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE QUALITY; IMAGING SYSTEMS; ION BEAMS; REPAIR; VOLTAGE MEASUREMENT;

DESIGN MODIFICATION; FOCUSED ION BEAM; IMAGE VISIBILITY; VOLTAGE CONTRAST MEASUREMENT;

INTEGRATED CIRCUIT TESTING;

EID: 0033145301     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00138-9     Document Type: Article

References (5)

1. R.G. Lee and J.C Morgan, "Integration of Focused Ion Beam System in a Failure Analysis Environment", ISTFA'91, pp 85-95.
2. Ann N. Campbell, Kenneth A. Peterson, Daniel M. Fleetwood, Jerry M; Soden, "Effect of Focused Ion Beam Irradiation on MOS Transistors", IRPS'97, April 1997, pp 72-81.
3. Ann N. Campbell, J.M. Soden, J. Rife, "Electrical Biasing and Voltage Contrast Imaging in a Focused Ion Beam System", Proc. 21th Int. Symp. for Testing and Failure Analysis, ISTFA'95, pp 33-41, 1995.
4. J. Benbrik, B. Benteo, P. Perdu, "Electrical degradation of CMOS devices due to FIB exposure", P2ID - Plasma Induced Damage IEEE conference, 1998.
5. H.P. Feuerbaum, "Electron beam testing: Method and applications", Scanning electron microscopy, 1983.