Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1143-1148

  Pogany, D ^a   Seliger, N ^b   Litzenberger, M ^a   Gossner, H ^c   Stecher, M ^c   Muller Lynch T ^c   Werner, W ^c   Gornik, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b SIEMENS AG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC DISCHARGES; ELECTRIC SPACE CHARGE; INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; NUMERICAL ANALYSIS; POWER ELECTRONICS; SEMICONDUCTOR DIODES;

BACKSIDE INFRARED MICROSCOPY; DAMAGE ANALYSIS; ELECTROSTATIC DISCHARGE PROTECTION DEVICES; SMART POWER TECHNOLOGY; ZERO BIAS SPACE CHARGE REGION;

ELECTROSTATIC DEVICES;

EID: 0033143207     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00162-6     Document Type: Article

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