Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 181-184

  Barthelmess, R ^a   Beuermann, M ^a   Metzner, D ^a   Schmidt, G ^a   Westerholt, D ^a   Winter, N ^a   Gerstenmaier, Y C ^a   Reznik, D ^a   Ruff, M ^a   Schulze, H J ^a   Willmeroth, A ^a  

^a eupec GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARBON; ELECTRIC LOSSES; PASSIVATION; POWER ELECTRONICS; THYRISTORS;

ELECTROACTIVE PASSIVATION;

SEMICONDUCTOR DEVICES;

EID: 0031621373     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)