Simulation study of IBE process for III-V compounds in mesa and trenches

Materials Research Society Symposium - Proceedings

Volumn 490, Issue , 1998, Pages 225-230

  Houlet, L ^a   Rhallabi, A ^a   Turban, G ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); ION BOMBARDMENT; MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES;

HYDRODYNAMIC SURFACES; ION BEAM ETCHING; ION SPUTTERING; MASK EROSION; MASK SHADOWING; MESA; PATTERN TRANSFER; TRENCH; VACUUM SOLID INTERFACES;

REACTIVE ION ETCHING;

EID: 0032305645     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)