Study of nanometer resolution resist slope for the UVIII chemically amplified resist

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 201-204

  Gerardino, A ^a   Gentili, M ^a   Di Fabrizio, E ^a   Calarco, R ^a   Mastrogiacomo, L ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; MASKS; NANOSTRUCTURED MATERIALS; PHOTORESISTS; SEMICONDUCTING SILICON; ULTRAVIOLET RADIATION;

CHEMICALLY AMPLIFIED RESISTS; NANOMETER RESOLUTION RESIST SLOPES;

INTEGRATED CIRCUIT LAYOUT;

EID: 0033131648     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00062-3     Document Type: Article

References (4)

1. 1-The National Technology RoadMap for Semiconductor, Semiconductor Industry Association, 1997, pag.82 and following.
2. 2-E. A. Dobisz and C.R. Marrian - J. Vac. Scie. Technol. vol. B15(6), Nov/Dec 1997, pp. 2327-2331
3. 3-D. Macintyre and S. Thoms - Microelectronic Engineering 35 (1997) 213-216
4. 4-L. Grella, M. Gentili, E. Di Fabrizio, M. Baciocchi, L. Mastrogiacomo, R. Maggiora and L. Scopa - J. Vac. Scie. Technol. vol. B15(6), Nov/Dec 1997, pp. 1-5