DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 237-240

  Bruenger, W H ^a   Buschbeck, H ^b   Cekan, E ^b   Eder, S ^b   Fedynyshyn, T H ^c   Hertlein, W G ^c   Hudek, P ^d   Kostic, I ^d   Loeschner, H ^b   Rangelow, I W ^d   Torkler, M ^a  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b Ion Microfabrication Systems GmbH   (Austria)

^c SHIPLEY COMPANY   (United States)

^d UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ION BEAMS; IRRADIATION; SILICA;

DUV RESIST; WAFERS;

LITHOGRAPHY;

EID: 4243767937     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00054-9     Document Type: Article

References (3)

1. P.Hudek et al., EIPB-97, Dana Point, J. Vac. Sci. Technol. B Nov./Dec. 97, in press.
2. L.-M. Buchmann et al., Microelectromech. Systems 1, 116 (1992).
3. W. H. Bruenger, M. Torkler, L.-M. Buchmann, W. Finkelstein, EIPBN-97, Dana Point, J. Vac. Sci. Technol. B, Nov./Dec. 97, in press.