Initial wafer heating analysis for a SCALPEL lithography system

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 235-238

  Stanton, Stuart T ^a   Liddle, J Alexander ^a   Gallatin, Gregg M ^a   Kim, Byungkyu ^b   Engelstad, Roxanne L ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION;

ELECTRON COLUMN POTENTIAL; INITIAL WAFER HEATING ANALYSIS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0033130758     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00070-2     Document Type: Article

References (7)

1. 1. S. T. Stanton et al., SPIE Vol. 3331 (1998) p. 673.
2. 2. For example: S. Babin and I. Y. Kuzmin, SPIE Vol. 3048, (1997) p. 374.
3. 3. W. K. Waskiewicz et al., Proc. of the International Conf. of Micro and Nano-Engineering '97 (Sept. 1997).
4. 4. S. P. Timoshenko and J. N. Goodier, Theory of Elasticity, McGraw Hill, New York, 1987
5. 5. S. Stanton et al., The 42nd International Conf. on Electron, Ion, and Photon Beam Technol. (May 1998)
6. 6. R. C. Farrow et al., J. Vac. Sci. Technol. B 10(6), Nov/Dec 1992, p. 2780.
7. 7. A. V. Balakrishnan, Kalman Filtering Theory, Optimization Software, Inc., New York, 1984