Stress relief structures for ion-beam projection lithography masks

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 481-484

  Tejeda, R ^a   Engelstad, R ^a   Lovell, E ^a   Haugeneder, E ^b   Loschner H ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Ionen Mikrofabrikations Systeme GmbH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ION SOURCES; MASKS; OPTIMIZATION;

ION BEAM PROJECTION LITHOGRAPHY MASKS;

ION BEAM LITHOGRAPHY;

EID: 0033130741     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00045-3     Document Type: Article

References (5)

1. 1. Fisher, A., et al., J. Vac. Sci. Technol. B, Vol. 15, No. 6, pp. 2249-2254, 1997.
2. 2. Sprague, M., et al., Microelectron. Eng., Vol. 41/42, pp. 225-228, 1998.
3. 3. Tejeda, R., et al., submitted to Microelectron. Eng., 1999.
4. 4. Butschke, J., et al., submitted to Microelectron. Eng., 1999.
5. 5. Puisto, D., IBM, private communication.