Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3752-3754

  Garcia, J Ch ^a   Rosencher, E ^a   Collot, Ph ^a   Laurent, N ^a   Guyaux, J L ^a   Vinter, B ^a   Nagle, J ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CHEMICAL BEAM EPITAXY; COST EFFECTIVENESS; ENERGY GAP; FABRICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

BIPOLAR CASCADE LASER; EPITAXIALLY STACKED LASERS; ESAKI JUNCTIONS;

SEMICONDUCTOR LASERS;

EID: 0031365930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120408     Document Type: Article

References (8)

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