Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

Journal of Crystal Growth

Volumn 200, Issue 1-2, 1999, Pages 85-89

  Wang, J ^a   Nozaki, M ^a   Lachab, M ^a   Qhalid Fareed, R S ^a   Ishikawa, Y ^a   Wang, T ^a   Naoi, Y ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BAND GAP EMISSION; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

CRYSTAL GROWTH;

EID: 0033115624     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00935-X     Document Type: Article

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