Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

Electrochemical and Solid-State Letters

Volumn 1, Issue 4, 1998, Pages 188-190

  Liu, J L ^a   Cai, S J ^a   Jin, G L ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; NANOSTRUCTURED MATERIALS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

GROWTH RATE; SILICON NANOWIRE;

MOLECULAR BEAM EPITAXY;

EID: 0032188185     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390680     Document Type: Article

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