Surface of n-type InP (100) passivated in sulfide solutions

Semiconductors

Volumn 33, Issue 4, 1999, Pages 416-420

  Bessolov, V N ^a   Lebedev, M V ^a   Zahn, D R T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033114793     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187895     Document Type: Article

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