Evidence for photoluminescence band in p-type Al0.67Ga0.33As related to nonequilibrium DX- centers

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 3004-3010

  Gladkov, P ^a,b   Zdansky K ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EXCITONS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; BAND GAP EXCITATION; IONIZATION ENERGY; MOLE FRACTION; NONEQUILIBRIUM CENTERS; STRUCTURAL BROADBAND;

PHOTOLUMINESCENCE;

EID: 0030241713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363159     Document Type: Article

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