Beryllium diffusion in short-period AlxGa1-xAs/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 12-15

  Gaymann, A ^a   Maier, M ^a   Bronner, W ^a   Grun N ^a   Kohler K ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Cladding layer; Depth profile; Doping concentration

Indexed keywords

BERYLLIUM; CLADDING (COATING); COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES; SOLUBILITY;

COMPACT LASER STRUCTURES; DEPTH PROFILING;

HETEROJUNCTIONS;

EID: 0043266427     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01755-2     Document Type: Article

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