Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1111-1115

  Lehmann, B ^b   Fritsch, D ^b   Braunig D ^b  

^a Industry Canada   (Canada)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

ENERGY DEPENDENCE; THRESHOLD ENERGY;

SILICON CARBIDE;

EID: 0026393376     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124082     Document Type: Article

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