Effect of forming gas anneals on the photoluminescence from nanocrystalline silicon formed by Si+ implantation into SiO2 matrix

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 93-96

  Komoda, T ^a   Weber, J ^b   Homewood, K P ^c   Hemment, P L F ^c   Sealy, B J ^c  

^a PANASONIC CORPORATION   (Japan)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; LUMINESCENCE OF INORGANIC SOLIDS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICON;

NANOCRYSTALLINE SILICON;

ION IMPLANTATION;

EID: 0030566574     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00486-7     Document Type: Article

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