Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation

Semiconductors

Volumn 33, Issue 2, 1999, Pages 192-199

  Kovalev, A N ^a   Manyakhin, F I ^a   Kudryashov, V E ^b   Turkin, A N ^b   Yunovich, A E ^b  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033075994     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187669     Document Type: Article

References (23)

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