Avalanche breakdown luminescence of InGaN/AlGaN/GaN heterostructures

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Manyakhin, F ^a   Kovalev, A ^a   Kudryashov, V E ^b   Turkin, A N ^b   Yunovich, A E ^b  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; IMPACT IONIZATION; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

AVALANCHE BREAKDOWN; DIRECT BANDGAP SEMICONDUCTORS; LOW REVERSE BIAS; RADIATION SPECTRA;

HETEROJUNCTIONS;

EID: 4043093436     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S109257830000137X     Document Type: Article

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