Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 5-16

  Alexander, H ^a   Kolar, H R ^b   Spence, J C H ^b  

^a UNIVERSITY OF COLOGNE   (Germany)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); SHEAR STRESS; STACKING FAULTS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

FORMATION ENERGY;

SEMICONDUCTING SILICON;

EID: 0032760448     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L     Document Type: Article

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