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Volumn 404, Issue , 1996, Pages 189-194
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Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
ELECTRON BEAMS;
ELECTRON MICROSCOPY;
IRRADIATION;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SILICA;
SILICON NITRIDE;
ELECTRON IRRADIATION;
FRANK DISLOCATION LOOPS;
STACKING FAULT TETRAHEDRA;
VACANCY CLUSTERS;
CRYSTALS;
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EID: 0029709209
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (10)
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