On the influence of dislocations on the luminescence of Si:Er

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 347-351

  Cavallini, A ^a   Fraboni, B ^a   Bineiti, S ^b   Pizzini, S ^b   Lazzarini, L ^c   Salviati, G ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MILAN   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON TRANSITIONS; ERBIUM; LIQUID PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

DISLOCATION OPTICAL ACTIVITY;

SEMICONDUCTING SILICON;

EID: 0032711993     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-396x(199901)171:1<347::aid-pssa347>3.0.co;2-m     Document Type: Article

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