Low-temperature epitaxial growth of CeO2(110)/Si(100) structure by evaporation under substrate bias

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Inoue, Tomoyasu ^a   Yamamoto, Yasuhiro ^a   Satoh, Masataka ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; ELECTRONS; EPITAXIAL GROWTH; EVAPORATION; MAGNETIC FIELD EFFECTS; SEMICONDUCTING SILICON;

BIAS EVAPORATION; CERIUM DIOXIDE; ELECTRON BEAM EVAPORATION; LOW TEMPERATURE EPITAXIAL GROWTH; MASS SEPARATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030395603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1685     Document Type: Article

References (10)