Mapping of 6H-SiC for implantation control

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 335-340

  Morvan, E ^a   Godignon, P ^a   Montserrat, J ^a   Flores, D ^a   Jorda, X ^a   Vellvehi, M ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Carbides; Doping; Ion implantation; Simulation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ION BEAMS; ION IMPLANTATION; MONTE CARLO METHODS;

ION BEAM CHANNELING;

SILICON CARBIDE;

EID: 0040368627     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00411-7     Document Type: Article

References (4)

1. Morvan E., Godignon P., Montserrat J., Fernández J., Flores D., Millán J., Chante J.P. Mater. Sci. Engng B. 46:1997;218-222.
2. Echenique P.M., Niemen R.M., Ashley J.C., Ritchie R.H. Phys. Rev. A. 33:1986;00.
3. E. Morvan, P. Godignon, S. Berberich, M. Vellvehi, J. Millán, in: Proceedings of the E-MRS Spring Meeting, Strasbourg, France, 1998, pp. J-2.5.
4. N. Mestres, N. Ben El Mekki, F.J. Campos, J. Pascual, E. Morvan, P. Godignon, J. Millàn, G. Lulli, in: G. Pensl, H. Morkoç, B. Monemar, E. Jansén (Eds.), Silicon Carbide, III - Nitrides and Related Materials, Trans. Tech. Publ. Part 2, (1997) p. 733.