Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Journal of Materials Research

Volumn 14, Issue 8, 1999, Pages 3221-3225

  Sohn, M H ^a   Kim, S I ^a   Siangchaew, K ^b  

^a SKION Corporation   (United States)

^b STEVENS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CARBON; CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); ION BOMBARDMENT; MIXING; SILICON; SILICON CARBIDE; SUBSTRATES; SURFACE TREATMENT;

DIRECT CARBON ION BEAM DEPOSITION;

AMORPHOUS FILMS;

EID: 0032682929     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0435     Document Type: Article

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