Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 78-80

  Nossarzewska Orlowska, E ^a   Kozlowski, R ^a   Brzozowski, A ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DIODES; SILICON WAFERS;

MESA DIODES; SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032681131     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01473-9     Document Type: Article

References (4)

1. B. Dezillie, Pres. at 2nd ROSE Workshop on Radiation Hardening of Silicon Detectors, CERN, Geneva, CERN/LHCC 97-39, 4-5 February 1997.
2. F. Lemeilleur, G. Lindstroem, S. Watts, Status Report/RD48, CERN/LHCC 97-39, 20 June 1997.
3. Gill K., Hall G., MacEvoy B. J. Appl. Phys. 82:1997;126.
4. Li Z., Li C.J., Eremin V., Verbitskaya E. Nucl. Instr. and Meth. A. 377:1996;265.